Effect of a guard-ring on the leakage current in a Si-PIN x-ray detector for a single photon counting sensor (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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概要
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PIN diodes for digital X-ray detection as a single photon counting sensor were fabricated on a floating-zone (FZ) n-type (111), high resistivity (5〜10kΩ・cm) silicon substrates (500μm thickness). Its electrical properties such as the leakage current and the breakdown voltage were characterized. The size of pixels was 100μm×100μm. The p+ guard-ring was formed around the active area to reduce the leakage current. After the p+ active area and guard-ring were fabricated by the ion-implantation, the extrinsic-gettering on the wafer backside was performed to reduce the leakage current by n+ ion-implantation. PECVD oxide was deposited as an IMD layer on front side and then, metal lines were formed on both sides of wafers. The leakage current of detectors was significantly reduced with a guard-ring when compared with that without a guard ring. The leakage current showed the strong dependency on the gap distance between the active area and the guard ring. It was possible to achieve the leakage current lower than 0.2 nA/cm^2.
- 社団法人電子情報通信学会の論文
- 2007-06-18
著者
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Kim Bong‐hoe
Korea Electrotechnology Res. Inst. Ansan Kor
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Jin Seung‐oh
Korea Electrotechnology Res. Inst. Ansan Kor
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Seo Jung-ho
Department Of Metallurgy And Materials Engineering Micro Biochip Center Hanyang University
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Park Jin-goo
Department Of Metallurgy And Materials Engineering Micro Biochip Center Hanyang University
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Kim Bong-hui
Korea Electrotechnology Research Institute
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Ban Chang-hyun
Department Of Metallurgy And Materials Engineering Micro Biochip Center Hanyang University
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Park Jin-goo
Department Of Metallurgy And Materials Engineering Center For Electronic Materials And Components Ha
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KIM Jin-Young
Research Center for Proteineous Materials (RCPM)
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KIM Jin-Young
Department of Metallurgy and Materials Engineering, Micro Biochip Center, Hanyang University
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LIM Hyun-Woo
Department of Metallurgy and Materials Engineering, Micro Biochip Center, Hanyang University
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KIM Kyu-Chae
Department of Metallurgy and Materials Engineering, Micro Biochip Center, Hanyang University
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JIN Seung-Oh
Korea Electrotechnology Research Institute
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HU Young
Korea Electrotechnology Research Institute
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Jun Seong-Chae
Korea Electrotechnology Research Institute
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Kim Kyu-chae
Department Of Metallurgy And Materials Engineering Micro Biochip Center Hanyang University
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Lim Hyun-woo
Department Of Metallurgy And Materials Engineering Micro Biochip Center Hanyang University
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Kim Jin-young
Department Of Electronic Engineering Chonnam National University
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Lim Hyun-Woo
Department of Bio-Nano Technology and Micro Biochip Center, Hanyang University, Ansan 426-791, Korea
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Park Jin-Goo
Department of Bio-Nano Technology and Micro Biochip Center, Hanyang University, Ansan 426-791, Korea
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- Effect of a Guard-Ring on the Leakage Current in a Si-PIN X-Ray Detector for a Single Photon Counting Sensor
- Effect of a guard-ring on the leakage current in a Si-PIN x-ray detector for a single photon counting sensor (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Effect of a guard-ring on the leakage current in a Si-PIN x-ray detector for a single photon counting sensor (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
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