The Effect of Hydrogen Peroxide on Frictional and Thermal Behaviors in a Citric Acid-Based Copper Chemical Mechanical Planarization Slurry

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概要

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• The effect of H2O2 on the frictional and thermal behaviors of a citric acid-based slurry was characterized during Cu polishing. As the H2O2 concentration increased, the static and dynamic etching rates gradually decreased. The removal rate of Cu initially increased and reached the maximum value at a slurry concentration of 5 vol % H2O2 after which the removal rate gradually decreased with further increases in H2O2 due to the formation of a thick Cu oxide layer. The frictional force gradually decreased with increased H2O2 concentration. The friction force was high in spite of the low removal rate in the 1 vol % H2O2 slurry. The pad temperature changed as a function of H2O2 concentration in a manner similar to at that of the friction force. The higher pad temperature resulted in higher static etching and corrosion rates of Cu during polishing.

• 2008-07-25

著者

• Park Jin-goo

  Department Of Metallurgy And Materials Engineering Center For Electronic Materials And Components Ha

• Kim In-Kwon

  Department of Materials Engineering, Hanyang University, Ansan 426-791, Korea

• Eom Dae-Hong

  Department of Materials Engineering, Hanyang University, Ansan 426-791, Korea

• Kang Young-Jae

  Department of Materials Engineering, Hanyang University, Ansan 426-791, Korea

• Park Jin-Goo

  Department of Bio-Nano Technology and Micro Biochip Center, Hanyang University, Ansan 426-791, Korea

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