Effect of Corrosion Inhibitor, Benzotriazole, in Cu Slurry on Cu Polishing
スポンサーリンク
概要
- 論文の詳細を見る
In this study, the effect of benzotriazole (BTA) in Cu slurry on Cu polishing behavior was investigated as functions of H2O2 and slurry pH. The addition of BTA to slurry effectively prevented Cu from being etched by forming a passivation layer of Cu–BTA regardless of pH and H2O2 concentration in the slurry. The passivation layer on the Cu wafer exhibited a contact angle of 50° in solution with BTA and H2O2. The dynamic etching rate, i.e., the Cu polishing rate using abrasive-free slurry, also decreased when BTA was added to the slurry at pH 2, 4, and 6. The removal rate of Cu in slurry without BTA was strongly dependent on H2O2 concentration and pH. In slurry with BTA, Cu–BTA on the Cu surface prevented the etching of Cu. At pH 2 and 4, the removal rates were lower in slurry with BTA than in slurry without BTA. However, slurries of pH 6 or higher with BTA showed higher removal rates at higher concentrations of H2O2 than 10%, which was explained by the thick passivating oxide layer formed at higher pH and H2O2 concentrations.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2008-01-25
著者
-
Park Jin-goo
Department Of Metallurgy And Materials Engineering Center For Electronic Materials And Components Ha
-
Kim In-Kwon
Department of Materials Engineering, Hanyang University, Ansan 426-791, Korea
-
Kang Young-Jae
Department of Materials Engineering, Hanyang University, Ansan 426-791, Korea
-
Kim Tae-Gon
Department of Materials Engineering, Hanyang University, Ansan 426-791, Korea
-
Park Jin-Goo
Department of Materials Engineering, Hanyang University, Ansan 426-791, Korea
-
Park Jin-Goo
Department of Bio-Nano Technology and Micro Biochip Center, Hanyang University, Ansan 426-791, Korea
関連論文
- Effect of a Guard-Ring on the Leakage Current in a Si-PIN X-Ray Detector for a Single Photon Counting Sensor
- Effect of a guard-ring on the leakage current in a Si-PIN x-ray detector for a single photon counting sensor (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Effect of a guard-ring on the leakage current in a Si-PIN x-ray detector for a single photon counting sensor (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- Reaction of Ozone and H_2O_2 in NH_4OH Solutions and Their Reaction with Silicon Wafers
- Point of Use Regeneration of Oxide Chemical Mechanical Planarization Slurry by Filtrations
- Effect of Chemicals and Slurry Particles on Chemical Mechamical Polishing of Polyimide
- Particle Removal and Its Mechanism on Hydrophobic Silicon Wafer in Highly Diluted NH_4OH Solutions with an Added Surfactant : Semiconductors
- Effect of Organic Acids in Copper Chemical Mechanical Planarization Slurry on Slurry Stability and Particle Contamination on Copper Surfaces
- Passivation and Etching of Wafer Surfaces in HF-H_2O_2-WA Solutions
- The Hydrophilization of Process Wafers in Dilute Hydrogen Peroxide Solutions and Ozonated Deionized Water and Its Effects on Defects and Gate Oxide Integrity
- Enhanced fluorescence by controlled surface roughness of plastic biochip (Special issue: Microprocesses and nanotechnology)
- The effect of silicon content in the high temperature tensile test
- Damage Free Particle Removal from Extreme Ultraviolet Lithography Mask Layers by High Energy Laser Shock Wave Cleaning
- Effect of Alkaline pH on Polishing and Etching of Single and Polycrystalline Silicon
- Reaction of Ozone and H2O2 in NH4OH Solutions and Their Reaction with Silicon Wafers
- The Effect of Hydrogen Peroxide on Frictional and Thermal Behaviors in a Citric Acid-Based Copper Chemical Mechanical Planarization Slurry
- Effective Carbon Contaminant Cleaning Condition Using Ozone Dissolved Water and Megasonic for Ru-Capped Extreme Ultraviolet Lithography Mask
- Fabrication of Large-Area CoNi Mold for Nanoimprint Lithography
- Fabrication of Stainless Steel Mold Using Electrochemical Fabrication Method for Microfluidic Biochip
- Physical and Chemical Characterization of Reused Oxide Chemical Mechanical Planarization Slurry
- Hybrid Cleaning Technology for Enhanced Post-Cu/Low-Dielectric Constant Chemical Mechanical Planarization Cleaning Performance
- Effect of Corrosion Inhibitor, Benzotriazole, in Cu Slurry on Cu Polishing
- The Hydrophilization of Process Wafers in Dilute Hydrogen Peroxide Solutions and Ozonated Deionized Water and Its Effects on Defects and Gate Oxide Integrity
- Hybrid Cleaning Technology for Enhanced Post-Cu/Low-Dielectric Constant Chemical Mechanical Planarization Cleaning Performance (Special Issue : Advanced Metallization for ULSI Applications)