2.4--10 GHz Low-Noise Injection-Locked Ring Voltage Controlled Oscillator in 90 nm Complementary Metal Oxide Semiconductor

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概要

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• A wide-frequency-range low-phase-noise voltage controlled oscillator (VCO) with subharmonic injection locking is proposed and an implementation in 90 nm complementary metal oxide semiconductor (CMOS) is demonstrated. The result is a combination of the scalability and wide frequency tuning range naturally expected of a ring VCO and phase-noise performance close to that of an LC VCO using injection locking. The fabricated circuit is only 0.00054 mm2 in area, and its frequency tuning range is from 2.4 to 10 GHz. For a 500 MHz input reference signal and a 9.0 GHz ($=18\times 500$ MHz) output frequency, the 1-MHz-offset phase noise was $-125$ dBc/Hz. This is a 54 dB improvement over the free-running VCO phase noise of $-71$ dBc/Hz. The power consumption at 9.0 GHz is 9.5 mW.

• 2011-04-25

著者

• Amakawa Shuhei

  Solution Science Research Laboratory (SSRL), Tokyo Institute of Technology

• Masu Kazuya

  Solutions Research Laboratory Tokyo Institute Of Technology

• Ishihara Noboru

  Solutions Research Laboratory Tokyo Institute Of Technology

• Amakawa Shuhei

  Solutions Research Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

• Lee Sang-Yeop

  Solutions Research Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan

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