Reflectance Difference Spectroscopy in Vacuum–Ultraviolet Range: Developing Measurement System and Applying to Characterization of SiO2/Si Interfaces
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概要
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Reflectance difference spectroscopy (RDS) in the vacuum–ultraviolet (VUV) range has been developed for the first time. The spectral range of RDS has been extended up to 8.4 eV by using a D2 lamp, MgF2-based optical elements, and an N2-purged measurement environment. This new technique has been applied to investigate the oxidation-induced optical anisotropies of the Si surfaces with (110), (331), (120), and (113) orientations. The thermal oxidation of the Si(113) surface caused large changes in the RD spectrum, which we interpret as being due to anisotropic morphology at the SiO2/Si interface. Distinct RD changes upon oxidation were also observed above 7 eV for the (110), (331), and (113) surfaces. We ascribe this feature to the optical transitions involving the electronic states of the interface Si–O bonds. These results demonstrate that VUV-RDS is a unique tool for characterizing dielectrics/semiconductor interfaces.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2010-02-25
著者
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Tanaka Masatoshi
Department Of Comprehensive Management Matsumoto University
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Tsuyoshi Horikawa
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Ogata Shoichi
Department of Physics, Faculty of Engineering, Yokohama National University, Hodogaya-ku, Yokohama 240-8501, Japan
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Ohno Shinya
Department of Physics, Faculty of Engineering, Yokohama National University, Hodogaya-ku, Yokohama 240-8501, Japan
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Tetsuji Yasuda
National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8562, Japan
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Shinya Ohno
Department of Physics, Faculty of Engineering, Yokohama National University, Hodogaya-ku, Yokohama 240-8501, Japan
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Shoichi Ogata
Department of Physics, Faculty of Engineering, Yokohama National University, Hodogaya-ku, Yokohama 240-8501, Japan
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