Study of Local Valence Electronic States of SiO Ultrathin Films Grown on Si(111) by Using Auger Photoelectron Coincidence Spectroscopy : Upward Shift of Valence-Band Maximum Depending on the Interface Structure

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概要

• 論文の詳細を見る

著者

• Kakiuchi Takuhiro

  Department Of Chemistry Faculty Of Science Ehime University

• Tanaka Masatoshi

  Department Of Comprehensive Management Matsumoto University

• Kakiuchi Takuhiro

  School Of High Energy Accelerator Science The Graduate University For Advanced Studies

• Mase Kazuhiko

  Department of Materials Structure Science, School of High Energy Accelerator Science, The Graduate University for Advanced Studies, Tsukuba, Ibaraki 305-0801, Japan

• Fujita Narihiko

  Department of Physics, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan

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