Study of Local Valence Electronic States of SiO Ultrathin Films Grown on Si(111) by Using Auger Photoelectron Coincidence Spectroscopy : Upward Shift of Valence-Band Maximum Depending on the Interface Structure
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概要
著者
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Kakiuchi Takuhiro
Department Of Chemistry Faculty Of Science Ehime University
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Tanaka Masatoshi
Department Of Comprehensive Management Matsumoto University
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Kakiuchi Takuhiro
School Of High Energy Accelerator Science The Graduate University For Advanced Studies
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Mase Kazuhiko
Department of Materials Structure Science, School of High Energy Accelerator Science, The Graduate University for Advanced Studies, Tsukuba, Ibaraki 305-0801, Japan
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Fujita Narihiko
Department of Physics, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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