Oxynitride Formation Processes on Si(001) Studied by Means of Reflectance Difference Spectroscopy
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概要
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We investigated nitric oxide (NO) adsorption processes on Si(001) at temperatures of 110--873 K at a pressure of 1.0\times 10^{-5} Pa by reflectance difference spectroscopy (RDS). The transition of the growth modes between Langmuir-type adsorption and two-dimensional oxide island growth was identified from the spectral line shape obtained with RDS, and from Arrhenius plots of the time constant for reaction in the growth of a monolayer oxynitride film. The decrease in the time constant at temperatures below 300 K compared to that at temperatures above 573 K suggested that trapping-mediated adsorption takes place at temperatures below 300 K.
- 2013-12-25
著者
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Suzuki Takanori
Deparment Of Biological Science Graduate School Of Science Hiroshima University
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Ohno Shin-ya
Department Of Physics Faculty Of Engineering Yokohama National University
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Tanaka Masatoshi
Department Of Comprehensive Management Matsumoto University
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Ochiai Toshiyuki
Department of Physics, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501, Japan
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Tanaka Masatoshi
Department of Physics, Faculty of Engineering, Yokohama National University, Yokohama 240-8501, Japan
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Mitobe Fumitake
Department of Physics, Faculty of Engineering, Yokohama National University, Yokohama 240-8501, Japan
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