Mask Pattern Correction by Energy Loss Compensation in Extreme Ultraviolet Lithography
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概要
- 論文の詳細を見る
In extreme ultraviolet (EUV) lithography with off-axis incidence, the incident light loses energy when it is reflected from a mask onto a wafer because the absorber pattern blocks some of the incident and diffracted light, and the absorber side wall reflects some of the incident light. This study concerns mask pattern correction to compensate for the energy loss at the pupil. Simple negative biasing was found to be an effective compensation technique. That is, when the absorber stack is thin, a narrowed mask pattern by adding a negative bias and off-axis incidence produce about the same optical proximity effects (OPE) as an unbiased mask and normal incidence. This makes it possible to use conventional algorithms for optical proximity effect correction (OPC), which are optimized for normal incidence. For a thin absorber stack, combining energy loss compensation for off-axis incidence with conventional OPC for normal incidence provides excellent pattern fidelity, sufficient critical dimension (CD) uniformity, and good pattern edge contrast at the same time.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-07-15
著者
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Nishiyama Iwao
Association Of Super-advanced Electronic Technologies Euv Process Technology Research Laboratory
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Sugawara Minoru
Association Of Super-advanced Electronic Technologies Euv Process Technology Research Laboratory
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Takai Mikio
Research Center For Environmental Genomics Kobe University
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Nishiyama Iwao
Association of Super-Advanced Electronic Technologies, EUV Process Technology Research Laboratory, c/o NTT Atsugi R&D Center, 3-1 Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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Sugawara Minoru
Association of Super-Advanced Electronic Technologies, EUV Process Technology Research Laboratory, c/o NTT Atsugi R&D Center, 3-1 Morinosato, Wakamiya, Atsugi-shi, Kanagawa 243-0198, Japan
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