Evaluation of Fast Neutron Induced Single Event Upset in a Static Random Access Memory and Simulation by Monte Carlo N-Particle Code (MCNPX)
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概要
- 論文の詳細を見る
Neutron-induced single-event upsets (SEUs) in a 0.4 μm 4 Mbit CMOS SRAM (complimentary metal oxide semiconductor static random access memory) were investigated using high-energy neutron beams and Monte Carlo simulation by MCNPX (Monte Carlo N-Particle Code). The Monte Carlo simulation, based on the assumption that the primary cause of SEUs is alpha particles generated by nuclear fission, agreed with the experimental results within the accuracy of $\pm 29$% in the case of small cell charges ($<$10 fC). When the devices were exposed to fast neutrons in the front-surface direction, the SEU rates increased by a factor of 1.1 to 2 in comparison with the case of back-surface irradiation. According to the Monte Carlo simulation, the difference between the alpha particle production cross section of the carbon atom in package materials and that of the silicon atom caused this phenomenon.
- 2004-06-15
著者
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Hatanaka Kichiji
Research Center For Nuclear Physics Osaka University
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Matsuoka Nobuyuki
Research Center For Nuclear Physics Osaka University
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Ogawa Izumi
Department Of Physics Osaka University
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Nagai Yasuki
Research Center For Nuclear Physics Osaka University
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ARITA Yutaka
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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Takai Mikio
Research Center For Environmental Genomics Kobe University
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Kishimoto Tadafumi
Department Of Physics Osaka University
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Ogawa Izumi
Department of Physics, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
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Nagai Yasuki
Research Center for Nuclear Physics, Osaka University, 10-1 Mihogaoka, Ibaraki, Osaka 567-0047, Japan
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Kishimoto Tadafumi
Department of Physics, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
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