Simulation of Thermal-Neutron-Induced Single-Event Upset Using Particle and Heavy-Ion Transport Code System

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概要

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• The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-μm-design-rule 4 Mbit static random access memory (SRAM) using particle and heavy-ion transport code system (PHITS). The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-06-15

著者

• NIITA Koji

  Research Organization for Information Science and Technology

• Ogawa Izumi

  Department Of Physics Osaka University

• Kishimoto Tadafumi

  Department Of Physics Osaka University

• Yoshihara Tsutomu

  Graduate School Of Information Production And System Waseda University

• Takai Mikio

  Center for Quantum Science and Technology under Extreme Conditions and Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

• Arita Yutaka

  Renesas Technology Corp., Itami, Hyogo 664-0005, Japan

• Kihara Yuji

  Renesas Technology Corp., Itami, Hyogo 664-0005, Japan

• Mitsuhasi Junich

  Renesas Technology Corp., Itami, Hyogo 664-0005, Japan

• Niita Koji

  Research Organization for Information Science and Technology, Tokai, Ibaraki 319-1106, Japan

• Niita Koji

  Research Organization for Information Science & Technology, Tokai, Ibaraki 319-1106, Japan

• Ogawa Izumi

  Department of Physics, Osaka University, Toyonaka, Osaka 560-8531, Japan

• Kishimoto Tadafumi

  Department of Physics, Osaka University, Toyonaka, Osaka 560-8531, Japan

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