Fabrication of Nano Electron Source Using Beam-Assisted Process
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概要
- 論文の詳細を見る
A new structure and the fabrication processes of a field emission electron source using chemical reactions by an electron beam (EB) or a focused ion beam (FIB) were proposed. Various gate diameters and emitter heights can freely be fabricated using these processes. An insulator of ring shape was deposited on a Si substrate by chemical reactions using EB or FIB in a tetraethyl orthosilicate (TEOS) atmosphere. A Pt gate was then deposited on the insulator ring using EB in a methyl cyclopentadienyl trimethyl platinum [C5H5Pt(CH3)3] atmosphere. A Pt emitter was deposited into the ring gate opening in the same way. In the quickest process, an electron-source structure with a gate diameter of 300 nm and a cathode height of 500 nm could be fabricated in 189 s using only an EB-induced reaction.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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MURAKAMI Katsuhisa
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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Takai Mikio
Research Center For Environmental Genomics Kobe University
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JARUPOONPHOL Werapong
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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Sakata Kazuaki
Research Center for Materials Science at Extreme Conditions, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
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