Wavelength Dependence of UV Laser Cleaning for Silicon Field Emitter Arrays
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概要
- 論文の詳細を見る
The effect of laser irradiation on Si field emitter arrays has been investigated as a function of wavelength using different harmonics of a diode-pumped $Q$-switched Nd:YLF laser. The laser wavelength was varied as 1047 nm, 523 nm, 349 nm and 262 nm. Infrared ($\lambda=1047$ nm) or visible ($\lambda=523$ nm) laser irradiation did not change the emission current, while UV ($\lambda=349$ nm) laser irradiation increased the emission current due to the cleaning of the emitter tip surface. On the other hand, UV ($\lambda=262$ nm) laser irradiation resulted in a temporary reverse current. Desorption gas species were found to be H2O gases during UV ($\lambda=349$ nm) laser irradiation. These gas species were related to with the improvement in emission current.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-06-15
著者
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Kanazawa Yasunori
Research Center For Materials Science At Extreme Conditions Osaka University
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Sawada Akihiro
Research Center For Materials Science At Extreme Conditions And Graduate School Of Engineering Scien
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Zhao Wei
Research Center For Materials Science At Extreme Conditions Osaka University
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Takai Mikio
Research Center For Environmental Genomics Kobe University
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JARUPOONPHOL Werapong
Research Center for Materials Science at Extreme Conditions and Graduate School of Engineering Scien
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Takai Mikio
Research Center for Materials Science at Extreme Conditions, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
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Zhao Wei
Research Center for Materials Science at Extreme Conditions, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
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Kanazawa Yasunori
Research Center for Materials Science at Extreme Conditions, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
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Sawada Akihiro
Research Center for Materials Science at Extreme Conditions, Osaka University, 1-3 Machikaneyama, Toyonaka, Osaka 560-8531, Japan
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