Analysis of Printability of Scratch Defect on Reflective Mask in Extreme Ultraviolet Lithography
スポンサーリンク
概要
- 論文の詳細を見る
The aim of this study was to investigate the printability of a scratch defect on the surface of a glass substrate. Simulations revealed that smoothing deposition made a scratch more printable than non-smoothing deposition did. Smoothing deposition changes the topography of a scratch by making it shallower and wider as it propagates from the bottom to the top of a Mo/Si multilayer on a reflective mask blank. This change in topography shifts the phase, thereby reducing the energy of light reflected from the mask. In contrast, non-smoothing deposition preserves the topography of a scratch from the bottom to the top of a multilayer. As a result, non-smoothing deposition changes the phase less than smoothing deposition does, which makes a scratch less printable. An analysis of the intensity of diffracted rays clarified how much of the energy used to create a printed image was lost at the pupil due to a defect: The energy loss was approximately 10 times larger for smoothing than for non-smoothing deposition; and thus, the change in the critical dimension of a printed image on wafer was also much larger for smoothing deposition.
- 2006-12-15
著者
-
Nishiyama Iwao
Association Of Super-advanced Electronic Technologies Euv Process Technology Research Laboratory
-
Sugawara Minoru
Association Of Super-advanced Electronic Technologies Euv Process Technology Research Laboratory
-
Motai Kumi
Association of Super-Advanced Electronic Technologies, EUV Process Technology Research Laboratory, c/o NTT Atsugi R&D Center, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Cullins Jerry
Association of Super-Advanced Electronic Technologies, EUV Process Technology Research Laboratory, c/o NTT Atsugi R&D Center, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Nishiyama Iwao
Association of Super-Advanced Electronic Technologies, EUV Process Technology Research Laboratory, c/o NTT Atsugi R&D Center, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Sugawara Minoru
Association of Super-Advanced Electronic Technologies, EUV Process Technology Research Laboratory, c/o NTT Atsugi R&D Center, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
-
Cullins Jerry
Association of Super-Advanced Electronic Technologies, EUV Process Technology Research Laboratory, c/o NTT Atsugi R&D Center, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- Approach to Patterning of Extreme Ultraviolet Lithography Masks using Ru Buffer Layer : Surfaces, Interfaces, and Films
- Impact of Slanted Absorber Side Walls on Critical Dimension Error in Extreme Ultraviolet Lithography
- Analysis of Printability of Scratch Defect on Reflective Mask in Extreme Ultraviolet Lithography
- Atomic Hydrogen Cleaning of Surface Ru Oxide Formed by Extreme Ultraviolet Irradiation of Ru-Capped Multilayer Mirrors in H2O Ambience
- Mask Pattern Correction by Energy Loss Compensation in Extreme Ultraviolet Lithography
- Analysis of Asymmetry of Printed Image by Off-Axis Incident Light onto Reflective Mask in Extreme Ultraviolet Lithography
- Impact of Slanted Absorber Side Walls on Critical Dimension Error in Extreme Ultraviolet Lithography
- Design of Phase-Shift Masks in Extreme Ultraviolet Lithography
- Methodology of Merging Optical-Proximity-Effect Correction with Compensation of Effect of Off-Axis Incidence in Extreme Ultraviolet Lithography