Design of Phase-Shift Masks in Extreme Ultraviolet Lithography

概要

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An attenuated phase-shift mask (att-PSM) and an alternating phase-shift mask (alt-PSM) were designed for extreme ultraviolet lithography (EUVL). For an att-PSM, a bilayer structure is newly designed. The bilayer structure provides appropriate attenuated reflectance by choosing thicknesses and ensures sufficient thickness latitude. For the alt-PSM, the additive structure is newly introduced. The new additive structure generates 180 degrees of phase shift and uniform reflectance simultaneously. The new alt-PSM is constituted of materials of TaN, Ru, Si and Mo that have been already made available in a binary mask. An appropriate combination of materials in the additive structure also gives a flat surface structure. The new PSMs enable the fabrication of smaller gates with lengths of 18 nm or below.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2003-05-15