Impact of Slanted Absorber Side Walls on Critical Dimension Error in Extreme Ultraviolet Lithography
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2007-01-15
著者
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Nishiyama Iwao
Association Of Super-advanced Electronic Technologies Euv Process Technology Research Laboratory C/o
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SUGAWARA Minoru
Association of Super-Advanced Electronics Technologies, Atsugi Research Center, c
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Sugawara Minoru
Association Of Super-advanced Electronic Technologies Euv Process Technology Research Laboratory
関連論文
- Approach to Patterning of Extreme Ultraviolet Lithography Masks using Ru Buffer Layer : Surfaces, Interfaces, and Films
- Analysis of Asymmetry of Printed Image by Off-Axis Incident Light onto Reflective Mask in Extreme Ultraviolet Lithography
- Mask Pattern Correction by Energy Loss Compensation in Extreme Ultraviolet Lithography
- Impact of Slanted Absorber Side Walls on Critical Dimension Error in Extreme Ultraviolet Lithography
- Design of Phase-Shift Masks in Extreme Ultraviolet Lithography
- Analysis of Printability of Scratch Defect on Reflective Mask in Extreme Ultraviolet Lithography
- Mask Pattern Correction by Energy Loss Compensation in Extreme Ultraviolet Lithography
- Analysis of Asymmetry of Printed Image by Off-Axis Incident Light onto Reflective Mask in Extreme Ultraviolet Lithography
- Impact of Slanted Absorber Side Walls on Critical Dimension Error in Extreme Ultraviolet Lithography
- Design of Phase-Shift Masks in Extreme Ultraviolet Lithography
- Methodology of Merging Optical-Proximity-Effect Correction with Compensation of Effect of Off-Axis Incidence in Extreme Ultraviolet Lithography