Impact of Slanted Absorber Side Walls on Critical Dimension Error in Extreme Ultraviolet Lithography

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概要

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• An absorber pattern with slanted side walls on a reflective mask introduces a peculiar source of error in that it produces a difference in critical dimension (CD) between the parallel and perpendicular configurations, which describe the relationship between the projection vector of the incident light on the mask and the edge of an absorber pattern. Light illuminating a mask loses energy at the side walls because the side wall facing the light source reflects most of the incident light and absorbs the remainder, and the side wall facing away from the source casts a shadow. For slanted side walls, there is a difference in energy loss between the parallel and perpendicular configurations, depending on how large the side wall angle is, even if the pattern is biased so as to make the energy loss for the two configurations the same for a rectangular pattern. The different energy losses due to slanted side walls create a CD difference between the parallel and perpendicular configurations. In this study, we first investigated the impact of slanted side walls on printability for absorber patterns two cross-sectional shapes: trapezoid and inverted trapezoid. We then estimated the latitude in the side-wall angle with respect to the allowable CD difference between the parallel and perpendicular configurations. For the trapezoid shape, when the latitude in the side-wall angle is around 2°, the allowable CD difference is 0.5% for target CDs of 44 and 32 nm, and it is 1.0% for a target CD of 22 nm.

• Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
• 2007-01-15

著者

• Nishiyama Iwao

  Association Of Super-advanced Electronic Technologies Euv Process Technology Research Laboratory

• Sugawara Minoru

  Association Of Super-advanced Electronic Technologies Euv Process Technology Research Laboratory

• Nishiyama Iwao

  Association of Super-Advanced Electronic Technologies, EUV Process Technology Research Laboratory, c/o NTT Atsugi R&D Center, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

• Sugawara Minoru

  Association of Super-Advanced Electronic Technologies, EUV Process Technology Research Laboratory, c/o NTT Atsugi R&D Center, 3-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-0198, Japan

関連論文

• Approach to Patterning of Extreme Ultraviolet Lithography Masks using Ru Buffer Layer : Surfaces, Interfaces, and Films
• Impact of Slanted Absorber Side Walls on Critical Dimension Error in Extreme Ultraviolet Lithography
• Analysis of Printability of Scratch Defect on Reflective Mask in Extreme Ultraviolet Lithography
• Atomic Hydrogen Cleaning of Surface Ru Oxide Formed by Extreme Ultraviolet Irradiation of Ru-Capped Multilayer Mirrors in H2O Ambience
• Mask Pattern Correction by Energy Loss Compensation in Extreme Ultraviolet Lithography
• Analysis of Asymmetry of Printed Image by Off-Axis Incident Light onto Reflective Mask in Extreme Ultraviolet Lithography
• Impact of Slanted Absorber Side Walls on Critical Dimension Error in Extreme Ultraviolet Lithography
• Design of Phase-Shift Masks in Extreme Ultraviolet Lithography
• Methodology of Merging Optical-Proximity-Effect Correction with Compensation of Effect of Off-Axis Incidence in Extreme Ultraviolet Lithography

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