Atomic Hydrogen Cleaning of Surface Ru Oxide Formed by Extreme Ultraviolet Irradiation of Ru-Capped Multilayer Mirrors in H2O Ambience
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概要
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Atomic hydrogen generated by a heated catalyzer was used to clean Ru-capped extreme ultraviolet (EUV) multilayer mirrors, the surface of which was oxidized by EUV irradiation in an H2O ambience. An analysis of the change in surface composition by X-ray photoelectron spectroscopy (XPS) revealed that atomic hydrogen deoxidized the Ru oxide to metal. The EUV reflectivity of a multilayer mirror degraded by EUV-induced oxidation was almost restored, with only a marginal change in centroid wavelength within the measurement error. This indicates that the atomic hydrogen cleaning is a promising method of prolonging the lifetime of the multilayer optics of EUV lithography.
- 2007-07-25
著者
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Nishiyama Iwao
Association Of Super-advanced Electronic Technologies Euv Process Technology Research Laboratory
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Oizumi Hiroaki
Association of Super-Advanced Electronics Technologies (ASET), Atsugi Research Center, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Motai Kumi
Association of Super-Advanced Electronic Technologies, EUV Process Technology Research Laboratory, c/o NTT Atsugi R&D Center, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Motai Kumi
Association of Super-Advanced Electronics Technologies (ASET), Atsugi Research Center, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
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Izumi Akira
Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, Japan
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Namiki Akira
Kyushu Institute of Technology, Tobata, Kitakyushu 804-8550, Japan
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Nishiyama Iwao
Association of Super-Advanced Electronics Technologies (ASET), Atsugi Research Center, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198, Japan
関連論文
- Analysis of Printability of Scratch Defect on Reflective Mask in Extreme Ultraviolet Lithography
- Atomic Hydrogen Cleaning of Surface Ru Oxide Formed by Extreme Ultraviolet Irradiation of Ru-Capped Multilayer Mirrors in H2O Ambience
- Mask Pattern Correction by Energy Loss Compensation in Extreme Ultraviolet Lithography
- Analysis of Asymmetry of Printed Image by Off-Axis Incident Light onto Reflective Mask in Extreme Ultraviolet Lithography
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