Methodology of Merging Optical-Proximity-Effect Correction with Compensation of Effect of Off-Axis Incidence in Extreme Ultraviolet Lithography

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A simulation study proved that an approach of mask pattern correction provided sufficient pattern fidelity on a wafer. The method merges two types of corrections: one for the effects of off-axis incidence on a reflective mask, and the other for optical proximity effects. A simple bias correction to compensate for the effects of off-axis incidence yielded almost the same pattern fidelity for parallel and perpendicular configurations, which describe the relationship between the projection vector of light incident on the mask and the edge of an absorber pattern. In order to determine the appropriate bias, three evaluation functions describing the ratio of the energy for the parallel configuration to that for the perpendicular configuration were considered: the first concerned the energy of rays reflected from a mask, the second concerned the energy of diffracted rays passing through the pupil, and the third concerned 0th-order diffracted rays. The evaluation functions for reflected and 0th-order rays were suitable for comparatively large patterns (line width $\geq$ 33 nm). The function for diffracted rays passing through the pupil was suitable for relatively small patterns (line width = 22 nm). Since simply biased mask patterns produce the same pattern fidelity irrespective of the configuration, it is possible to apply conventional methods of optical-proximity-effect correction to the absorber patterns on a reflective mask. A comb pattern was used to demonstrate the feasibility of merging the two types of corrections.
Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
2007-10-15

Methodology of Merging Optical-Proximity-Effect Correction with Compensation of Effect of Off-Axis Incidence in Extreme Ultraviolet Lithography

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