Preparation of Ba(Ti,Zr)O3 Thick Films on Silicon Substrate by Screen Printing
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概要
- 論文の詳細を見る
BaTi0.975Zr0.025O3 thick films were prepared by a screen-printing method on Pt bottom electrodes using silicon substrates in the firing temperature range from 1330°C to 1370°C. The high-temperature sintering of Pt bottom electrodes and Ba(Ti,Zr)O3 thick films was successfully achieved using silicon substrates with a fairly thick oxide layer. The ferroelectric and piezoelectric properties of the thick films were examined. The remanent polarization of the thick films increased with increasing firing temperature. A remanent polarization of 13.8 μC/cm2 for a Ba(Ti,Zr)O3 thick film was obtained at a firing temperature of 1370°C. The longitudinal piezoelectric constant $d_{33}$ calculated from a unipolar signal (10 kV/cm, 1 Hz) curve was 610 pC/N for the thick film fired at 1370°C.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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Futakuchi Tomoaki
Toyama Industrial Techcnology Center
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SAKAI Yuichi
Toyama Industrial Technology Center
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Fujita Nao
Department Of Anesthesia Keiyu Orthopedic Hospital
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Adachi Masatoshi
Department Of Chemistry And Biotechnology Graduate School Of Engineering Tottori University
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Fujita Nao
Department of Electronics and Informatics, Faculty of Engineering, Toyama Prefectural University, Kosugi-machi, Toyama 939-0398, Japan
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Adachi Masatoshi
Department of Electronics and Informatics, Faculty of Engineering, Toyama Prefectural University, Kosugi-machi, Toyama 939-0398, Japan
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