Top-Seeded Solution Growth of Pb[(In1/2Nb1/2),(Mg1/3Nb2/3),Ti]O3 Single Crystals
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概要
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The crystal growth of relaxor-based ferroelectric single crystals Pb[(In1/2Nb1/2),(Mg1/3Nb2/3),Ti]O3 (PIMNT) was investigated using the top-seeded solution growth (TSSG) method. The concentration of Pb(In1/2Nb1/2)O3 in a melt was chosen to be 0.24 mole, and that of Pb(Mg1/3Nb2/3)O3 was changed from 0.36 to 0.42 mole. A mixture of PbO+B2O3 was used as a flax and the melt composition was PIMNT/PbO/B2O3=70/29/1 wt%. The obtained crystals showed that the concentration of Pb(In1/2Nb1/2)O3 slightly changed but that of Pb(Mg1/3Nb2/3)O3 increased by about 12%, 0.05 mole, compared to those of the melt. All crystals had a complete perovskite structure. A crystal with a composition of Pb[(In1/2Nb1/2)0.24(Mg1/3Nb2/3)0.43Ti0.33]O3 was obtained, and its Curie temperature was $T_{\text{c}} = 208$°C and rhombohedral-to-tetragonal phase transition temperature was $T_{\text{rt}} = 120$°C. A phase diagram for crystal growth near the morphotropic phase boundary mentioned above was obtained.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-09-15
著者
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Yamashita Yohachi
Advanced Discrete Semiconductors Technology Laboratory Corporate R&d Center Toshiba Corporation
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Karaki Tomoaki
Department Of Eiectronics And Lnformatics Faculty Of Engineering Toyama Prefectutral Universtiy
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Sumiyoshi Yoichi
Department Of Electronics And Informatics Faculty Of Engineering Toyama Prefectural University
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Nakamoto Maki
Department Of Electronics And Informatics Faculty Of Engineering Toyama Prefectural University
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Adachi Masatoshi
Department Of Chemistry And Biotechnology Graduate School Of Engineering Tottori University
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Hosono Yasuharu
Advanced Discrete Semiconductor Technology Laboratory, Corporate R&D Center, Toshiba Corporation
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Hosono Yasuharu
Advanced Discrete Semiconductors Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 1 Komukai Toshiba-cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Adachi Masatoshi
Department of Electronics and Informatics, Faculty of Engineering, Toyama Prefectural University, Kosugi-machi, Toyama 939-0398, Japan
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Sumiyoshi Yoichi
Department of Electronics and Informatics, Faculty of Engineering, Toyama Prefectural University, Kosugi-machi, Toyama 939-0398, Japan
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