Dislocation Formation in Czochralski Si Crystal Growth Using an Annealed Heavily B-Doped Si Seed

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概要

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• Dislocation formation in Czochralski (CZ) Si crystal growth using an annealed heavily B-doped Si seed has been investigated. Many dislocations were observed in the crystals grown from the annealed heavily B-doped Si seeds although no dislocations due to thermal shock were formed in the annealed seeds. No misfit dislocations should have been introduced in the grown crystal because there was no difference between the B concentration of the seeds and that of the grown crystals. However, many dislocation loops were observed in the annealed Si seeds. Therefore, the dislocations generated in the grown crystals were probably induced by the dislocation loops in the annealed seed.

• Japan Society of Applied Physicsの論文
• 2003-11-01

著者

• TAISHI Toshinori

  Faculty of Education, Shinshu University

• HUANG Xinming

  Silicon Technology Corporation

• YANG Deren

  State Key Lab of Si Materials, Zhejiang University

• Yu Xuegong

  Faculty Of Education Shinshu University

• Hoshikawa Keigo

  Faculty Of Education Shinshu University

• Yang Deren

  State Key Lab of Si Materials, Zhejiang University, Hangzhou 310027, People's Republic of China

• Yu Xuegong

  Faculty of Education, Shinshu University, Nishinagano, Nagano 380-8544, Japan

• Huang Xinming

  Silicon Technology Corporation, 897-20 Kyowa, Mochizuki, Kitasaku-Gun, Nagano 384-2204, Japan

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