Effect of Rapid Thermal Process on Oxygen Precipitation in Heavily Boron-Doped Czochralski Silicon Wafer
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概要
- 論文の詳細を見る
The effect of rapid thermal process (RTP) on oxygen precipitation in heavily boron-doped (HB) Czochralski (CZ) silicon (Si) wafers has been investigated. After RTP preannealing at high temperature, it was found that, contrary to lightly boron-doped (LB) silicon, a denuded zone (DZ) was not formed in the HB silicon. The oxygen precipitates and extended defects generated in the HB Si samples were smaller than those generated in the LB Si samples. It is considered that DZ formation by means of RTP may not be suitable for HB CZ silicon.
- 2003-12-15
著者
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YANG Deren
State Key Lab of Si Materials, Zhejiang University
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Yu Xuegong
State Key Lab Of Silicon Materials Zhejiang University
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Xu Jin
State Key Lab Of Silicon Materials Zhejiang University
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Ma Xiangyang
State Key Laboratory Of Silicon Materials Zhejiang University
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Que Duanlin
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
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Xu Jin
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
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Li Chunlong
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
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Yu Xuegong
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
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Ma Xiangyang
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
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