Bipolar Structure in Thermally Treated Czochralski Silicon Wafer
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概要
- 論文の詳細を見る
The carrier concentration profiles in p-type Czochralski (CZ) silicon (Si) wafers respectively subjected to one-step high temperature and three-step high-low-high annealing followed by a prolonged 450°C annealing have been investigated by spreading resistance profile (SRP). It is found that the carrier concentration profile in the p-type CZ Si wafer subjected to three-step annealing is characteristic of a PNP bipolar structure, while, that in the wafer subjected to one-step annealing is just characteristic of a PN junction. It is suggested that the formation of the PNP bipolar structure is due to the denuded zone formation and bulk oxygen precipitation.
- 2003-03-15
著者
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YANG Deren
State Key Lab of Si Materials, Zhejiang University
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Yu Xuegong
State Key Lab Of Silicon Materials Zhejiang University
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Ma Xiangyang
State Key Laboratory Of Silicon Materials Zhejiang University
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Que Duanlin
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
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Que Duanlin
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
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Fan Ruixin
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
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Yang Deren
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
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Fan Ruixin
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
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Yu Xuegong
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
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Ma Xiangyang
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
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Ma Xiangyang
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
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