Crystal Growth of Indium-Doped Czochralski Silicon for Photovoltaic Application
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
著者
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YANG Deren
State Key Lab of Si Materials, Zhejiang University
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Yu Xuegong
State Key Lab Of Silicon Materials Zhejiang University
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Hoshikawa Keigo
Faculty Of Education Shinshu University
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Zheng Xue
State Key Lab of Silicon Materials and Department of Material Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
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- Temperature Dependences of Acceptor Concentration, Conductivity Mobility, and Resistivity of Ga-Doped Czochralski-Si Crystals
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- Effect of Nitrogen Doping on Oxygen Precipitate Profiles in Czochralski Silicon Wafer
- Quantitative Study of the Evolution of Oxygen and Vacancy Complexes in Czochralski Silicon
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- Analysis of Oxygen Evaporation Rate and Dissolution Rate Concerning Czochralski Si Crystal Growth: Effect of Ar Pressure
- Dislocation Formation in Czochralski Si Crystal Growth Using an Annealed Heavily B-Doped Si Seed
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