High Strength Si Wafers with Heavy B and Ge Codoping
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概要
- 論文の詳細を見る
Si wafers with heavy B and Ge codoping have been characterized in comparison with lightly B-doped and heavily B-doped Si wafers as references. It was found that only a very few slip dislocations could be observed in the heavily B- and Ge-codoped ($10^{19}$ atoms/cm3) Si wafers, whereas many slip dislocations were observed in both the heavily B-doped ($10^{19}$ atoms/cm3) and the lightly B-doped ($10^{15}$ atoms/cm3) reference wafers, after the same heat treatment had been carried out. This indicates that heavily B- and Ge-codoped Si wafers have the highest resistance to thermal stress.
- Japan Society of Applied Physicsの論文
- 2003-12-15
著者
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Nakanishi Masami
Silicon Technology Corporation
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TAISHI Toshinori
Faculty of Education, Shinshu University
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HUANG Xinming
Silicon Technology Corporation
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SATO Tsuyoshi
Silicon Technology Corporation
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Hoshikawa Keigo
Faculty Of Education Shinshu University
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Nakanishi Masami
Silicon Technology Corporation, 897-20 Kyowa Mochizuki, Kitasaku-Gun, Nagano 384-2204, Japan
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Hoshikawa Keigo
Faculty of Education, Shinshu University, Nishinagano, Nagano 380-8544, Japan
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Taishi Toshinori
Faculty of Education, Shinshu University, Nishinagano, Nagano 380-8544, Japan
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Huang Xinming
Silicon Technology Corporation, 897-20 Kyowa Mochizuki, Kitasaku-Gun, Nagano 384-2204, Japan
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