Relationship between Gallium Concentration and Resistivity of Gallium-Doped Czochralski Silicon Crystals: Investigation of a Conversion Curve
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概要
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The relationship between gallium (Ga) concentration and resistivity was studied in Ga-doped Czochralski (CZ) silicon (Si) single crystals in the dopant concentration range from $1\times 10^{14}$ to $2\times 10^{18}$ atoms/cm3 by the four-point probe method, inductively coupled plasma (ICP) analysis, and Hall-effect measurement. The resistivity of Ga-doped Si was found to be larger than that of B-doped Si, because Ga is not fully ionized at Ga concentrations higher than $10^{16}$ atoms/cm3 at 300 K. A conversion curve from resistivity to Ga concentration in the range from $1\times 10^{14}$ to $1\times 10^{17}$ atoms/cm3 is proposed.
- 2008-12-25
著者
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Hoshikawa Keigo
Faculty Of Education Shinshu University
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Uda Satoshi
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Hoshikawa Takeshi
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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Huang Xinming
Institute for Material Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
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