Grown-in Defects in Heavily Boron-Doped Czochralski Silicon
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概要
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Grown-in defects including oxygen precipitates and voids in heavily boron-doped (HB) Czochralski (CZ) and lightly boron-doped (LB) CZ silicon crystals are reported in this paper. It was found that heavy boron-doping enhanced oxygen precipitation during high-temperature annealing. Meanwhile, it was clarified that the amount of larger crystal originated particles (COPs) decreased, while that of smaller COPs increased on as-grown HB wafers, in comparison to LB wafers. Furthermore, the COPs on the HB wafers can be more readily annihilated at relatively lower temperatures. In HB CZ silicon, the heavy boron-doping, on one hand, reduces the initial concentration of vacancies incorporated in the crystal; on the other hand, it enhances oxygen precipitation at high temperatures around 1150°C, which consumes a portion of the incorporated vacancies during crystal growth, thus further reducing the amount of vacancies contributing to void formation.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-07-15
著者
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YANG Deren
State Key Lab of Si Materials, Zhejiang University
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Yu Xuegong
State Key Lab Of Silicon Materials Zhejiang University
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Li Chunlong
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
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Li Chunlong
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
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Ma Xiangyang
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
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Yang Jiansong
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
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Yang Jiansong
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, People's Republic of China
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- Quantitative Study of the Evolution of Oxygen and Vacancy Complexes in Czochralski Silicon
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- Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature
- First-Principles Study of Interstitial Boron and Oxygen Dimer Complex in Silicon
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