Effect of Nitrogen Doping on Oxygen Precipitate Profiles in Czochralski Silicon Wafer
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概要
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The effect of nitrogen doping on the profiles of oxygen precipitates in Czochralski (CZ) silicon subjected to conventional annealing and rapid thermal annealing (RTA) has been investigated. After conventional high-low-high three-step annealing (1150 °C, 4 h + 650 °C, 128 h + 1050 °C, 16 h), it was found that an M-like oxygen precipitate profile existed in the cross section of a nitrogen-doped CZ silicon (NCZ-Si) wafer; however, this was not the case in conventional CZ silicon (CZ-Si) wafers. In contrast to conventional annealing, after rapid thermal annealing (RTA) followed by a low-high two-step annealing (800 °C, 8 h + 1050 °C, 16 h), an M-like oxygen precipitate profile existed in the cross section of the CZ-Si wafer but not in the NCZ-Si wafer. It is suggested that not only vacancies but also nitrogen doping have an influence on the oxygen precipitate profile. In addition, the relevant mechanism is discussed.
- 2006-06-15
著者
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YANG Deren
State Key Lab of Si Materials, Zhejiang University
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Ma Xiangyang
State Key Laboratory Of Silicon Materials Zhejiang University
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Cui Can
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China
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Que Duanlin
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China
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Que Duanlin
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
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Ma Xiangyang
State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou, 310027, People's Republic of China
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Ma Xiangyang
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China
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