Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition
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概要
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P-type microcrystalline silicon carbide (μc-SiC:H) alloys for application as a window layer in silicon based thin film solar cells were grown by hot-wire chemical vapor deposition using hydrogen diluted monomethylsilane and trimethylaluminum. Conductivities up to 0.1 S/cm were obtained for p-type material. The optical properties were studied by photothermal deflection spectroscopy. At photon energies below 1.25 eV, both free carrier and defect absorption lead to a high absorption coefficient. For photon energies ${>}2.0$ eV, the absorption coefficient is affected by the crystallinity and the structural composition. The structure of Al-doped μc-SiC:H thin films were investigated by infrared and Raman spectroscopy. It was found that increase of the deposition pressure can compensate for the loss of crystallinity caused by Al-doping. At high deposition pressure (${>}100$ Pa), increasing contributions of hexagonal SiC alloys, and separated carbon phases are observed.
- 2010-04-25
著者
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YANG Deren
State Key Lab of Si Materials, Zhejiang University
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Tao Chen
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China
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Chen Tao
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China
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Carius Reinhard
IEF-5 Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
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Friedhelm Finger
IEF-5 Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
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Friedhelm Finger
IEF-5 Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
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Deren Yang
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China
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Reinhard Carius
IEF-5 Photovoltaik, Forschungszentrum Jülich, 52425 Jülich, Germany
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