Crystallization and Raman Shift of Array-Orderly Silicon Nanowires after Annealing at High Temperature
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概要
- 論文の詳細を見る
Ordered silicon nanowires (SiNWs) with single crystal structure were synthesized using nanochannel-Al2O3 (NCA) and the chemical vapor deposition (CVD) method. Firstly, the SiNWs with nearly amorphous structure were fabricated at 500°C; then the SiNWs with crystalline structure were obtained by annealing an as-received sample at 800°C. The average diameter and length of the SiNWs are 40–70 nm and 10 μm, respectively. The Raman shift related to the crystallization and the amorphous SiNWs was analyzed.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2004-07-15
著者
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YANG Deren
State Key Lab of Si Materials, Zhejiang University
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Yang Qing
State Key Laboratory Of Fine Chemicals Dalian University Of Technology
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Niu Junjie
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, P. R. China
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Sha Jian
Department of Physics and State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, P. R. China
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Yang Qing
State Key Lab of Silicon Materials, Zhejiang University, Hangzhou, P. R. China
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