アバランシェ増幅型固体撮像素子の動作と光電変換特性 : 情報入力情報ディスプレイ(<特集>画像変換装置特集)

概要

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The possibility is investigated of an avalanche amplifying solid-state imager. A special designed 5-pixels Si avalanche photo-diode(APD) array operated under a charge storage mode is built. In below-breakdown operation,photo-electric conversion characteristic is devided into two regions. The slope of the curves γ in these regions is corresponding to γ=1 and 0.5,respectively. Increasing reverse bias applied to the APD, the nonlinear conversion region equivalent to γ=0.5 become dominant and be practically independent on an inherent gain of the APD. These properties are due to self-quenching of the gain. It is found that the variation of the responsivity of the array caused from the inherent gain nonuniformity is drastically decreased and approaches to the level roughly equal to a half of the pixel capasitance uniformity. The reduction of the variation is more successful for the array having smaller pixel capasitance. The fact is important for applying the APD to an imaging sensor. It is concluded that the array could be applicable over a wide field from extremly low-light level imaging to normal video camera use.
社団法人映像情報メディア学会の論文
1990-06-22