Au/p型a-SiC : H/a-Si : H/n型c-Si構造フォトダイオードにおける光電流・暗電流のn型c-Si不純物濃度依存性

概要

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We have studied the photocurrent multiplication in hydrogenated amorphous silicon-based Au/p-a-SiC : H/a-Si : H/n-c-Si structure photodiodes. They were fabricated on n c-Si substrate with the different impurity concentration, using an electron cyclotron resonance microwave plasma chemical vapor deposition (ECRPCVD) system. The photocurrent dependency on impurity concentration of the n c-Si were evaluated, and the photocurrent multiplication were observed only in the sample of about impulity concentration of 2×10^<16>cm^<-3>. The wavelength dependency on the incident light suggests that the photocurrent increase was caused by the avalanche multiplication in the a-Si : H layer.
社団法人映像情報メディア学会の論文
1997-12-19