シリコン基板上に作製した配向性AIN薄膜の圧力応答性

概要

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Highly c-axis-oriented aluminum nitride (AIN) thin film sensor elements were prepared on silicon single crystal by rf magnetron sputtering technique. The sensor characteristics were evaluated under pressures of 0.1 to 1.6 MPa and frequency of 0.1 to 100Hz at room temperature. The deviation from the linearity of charges with pressures for the AIN sensor was within 1.49% of a full scale at 1.6 MPa, which indicates a good linearity between 0.1 and 1.6 MPa. The AIN sensor showed a good flat frequency characteristic between 1 and 100Hz. It is confirmed that the AIN thin film has a good possibility as a pressure sensor.
社団法人日本セラミックス協会の論文
2005-10-01