AlN薄膜圧力センサーの電気モデルによる基本特性の解析

概要

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Highly c-axis-oriented aluminum nitride (AlN) thin film sensor elements were prepared on silicon single crystal substrate by rf magnetron sputtering technique. The sensor characteristics were evaluated under pressures of 0.4 to 8.0MPa and frequencies of 0.1 to 40Hz at room temperature. The deviation from the linearity of charges with pressures for the AlN sensor was within 0.90% of a full scale at 8.0MPa, which indicates a good linearity between 0.4 and 8.0MPa. The frequency response of AlN sensor showed the similar frequency characteristics as an electric model of connecting a capacitance to a resistance in parallel. It became clear that an electric model is effective in predicting the electric constant which determines the sensor characteristics.
社団法人日本セラミックス協会の論文
2005-12-01