インコネル基板上に作製した配向性AIN薄膜の高温高圧応答性

概要

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Highly c-axis-oriented aluminum nitride (AIN) thin film sensor elements were prepared on Inconel substrates by rf magnetron sputtering technique. The sensor characteristics were evaluated under pressures of 1.0 to 30.0 MPa and frequencies of 0.1 to 100 Hz at room temperature. The deviation from the linearity of charges with pressures for the AIN sensor was within 0.13% of a full scale at 30.0 MPa, which indicates a good linearity between 1.0 and 30.0 MPa. Furthermore the sensor characteristics were evaluated under pressures of 0.4 to 6.4 MPa and a frequency of 1 Hz at 500℃. The deviation from the linearity of charges with pressures for the AIN sensor was within 2.50% of a full scale at 6.4 MPa, which indicates a good linearity between 0.4 and 6.4 MPa. The temperature dependence of charge for the AIN sensor was small under pressure of ± 1.6 MPa in the temperature range from 25 to 500℃. It is confirmed that the AIN thin films have a good possibility for a pressure sensor under high temperatures and high pressures.
社団法人日本セラミックス協会の論文
2006-03-01