スパッタリングターゲット材料の窒化アルミニウム薄膜の結晶性及び配向性への影響

概要

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We have investigated the influence of the sputtering target material on the crystallinity and crystal orientation of aluminum nitride (AlN) thin films. It was found that the type of sputtering target material affects the crystallinity and orientation of AlN thin films. The crystallinity and c-axis orientation of thin films deposited with an aluminum target are higher than those of thin films prepared with a sintered AlN target. The full-width at half maximum of the X-ray diffraction (XRD) rocking curves of thin films deposited with aluminum and AlN targets were 3.1 and 8.5°, respectively. From the results of X-ray photoelectron spectroscopy (XPS) analysis, the thin film deposited with an aluminum target contained 2 atom% oxygen, and the thin film deposited with an AlN target contained 8 atom% oxygen. Furthermore, the AlN target contained 3.1 atom% oxygen by fusion extraction analysis. This suggests that the oxygen included in the AlN target disarranges the crystallinity and orientation of the AlN thin films.
社団法人日本セラミックス協会の論文
2002-02-01