減圧プラズマ溶射によるシリコン系材料の構造と電気的特性

概要

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By means of a low pressure plasma spraying method, silicon based material films have been prepared on the substrates with and without water cooling and with various hydrogen gas flow rates in a mixtured gas plasma. The relationship between the physical properties of the films and the growth conditions has been investigated by an X ray diffraction analysis, a Raman scattering spectroscopy, and an electric conductivity measurement. It was found that the films were almost porous polycrystalline silicon, and contained a slight amount of smaller microcrystalline silicon. The size of the microcrystalline silicon slightly decreased with in creasing the hydrogen gas flow rate, and in the case of the water-cooled substrate. The existence of a small amount of amorphous region was also suggested at higher hydrogen gas flow rate. Furthermore, the change in the electric conductivity was observed, which was related to the structural changes.
社団法人日本セラミックス協会の論文
1994-01-01