PTシード層を用いたCSD法PLZT薄膜の低温形成と配向制御

概要

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Lanthanum-modified lead zirconate titanate(PLZT) thin films with a La/Zr/Ti ratio of 10/65/35 were deposited on indium tin oxide(ITO)-coated soda lime glass substrates through chemicalsolution deposition method. Effects of excess lead addition of 30mol% in the precursor solution and/or insertion of a lead titanate(PT) film as a seeding layer between ITO and PLZT films on the crystallization behavior of the resultant PLZT thin films were investigated by X-ray diffraction. In addition, a PbO thin film was deposited on the PT seeding layer in order to control the orientation of PLZT thin films. As a result, single phase perovskite films with ferroelectricity could be successfully deposited at 450℃. Electrical properties of the resultant films were measured.
社団法人日本セラミックス協会の論文
2001-04-01