A Self-Consistent Electronic Structure Calculation of InAs-GaSb Interface
スポンサーリンク
概要
- 論文の詳細を見る
A self-consistent electronic structure at Inks-Garb interface is studied in the effec-Live mass approximation. At interface, the envelope functions are connected by thetransfer matrix method of Ando and Mori, and the spin-orbit interaction is explicitlytaken into account. It is reported that electrons in Inks conduction band exhibitsharp resonance levels in the energy range of GaSb valence band due to the large off-diagonal components of the transfer matrix. The obtained charge density at the infer-face is in agreement with experiments.
- 1989-01-15
著者
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Watanabe T
Ntt Basic Research Laboratory
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Inoue Masahiro
Institute for Materials Research, Tohoku University
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Watanabe T
Department Of Applied Physics Nagoya University:crest Japan Science And Technology Corporation (jst)
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Watanabe T
Kobe Univ. Kobe
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Inoue M
Riken Brain Sci. Inst. Saitama
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Miyazaki H
Tohoku Univ. Sendai
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Miyazaki Hiroshi
Department Of Cardiology Kyoto First Red Cross Hospital
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Takemori T
Institute Of Applied Physics University Of Tsukuba
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Takemori Tadashi
Institute Of Applied Physics University Of Tsukuba
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Horie C
Ishinomaki Senshu Univ. Ishinomaki Jpn
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Horie Chuji
Department Of Applied Physics Faculty Of Engineering Tohoku University
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Inoueu Masato
Laboratory For Mathematical Neuroscience Riken Brain Science Institute : Department Of Otolaryngolog
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Watanabe Takeshi
Department Of Applied Biological Chemistry Faculty Of Agriculture Niigata University
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HAMAKAWA Noriyuki
Institute of Applied Physics,University of Tsukuba
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Miyazaki H
Department Of Hematology Kumamoto University School Of Medicine
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Hamakawa Noriyuki
Institute Of Applied Physics University Of Tsukuba
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Miyazaki Hiroshi
Department Applied Physics Tohoku University
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Watanabe Takeshi
Department Of Agricultural Chemistry Faculty Of Agriculture Tohoku University
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INOUE Masasi
Department of Material Science, Faculty of Science, Hiroshima University
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