ダイヤモンドからの電界電子放出に関する研究 : 電界電子放出素子作製法の開発及び電界電子放出中のダイヤモンド表面の電子論的解析

概要

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Cone-shaped diamond-tip field electron emitter arrays (boron-doped synthetic single crystal diamond chip, (100) face, type Ib) were fabricated utilizing the SOG(spin-on glass) mask and oxygen reactive ion beam, and characterized. The tip radius of the fabricated diamond emitter arrays was less than 30nm. The threshold electric field of 7.5V/μm and the work function of 3.36eV were obtained from the diamond-tip field emitter array. The experiments on the field emission of the diamond-tip field emitter array at the applied voltage of 1000V for 400min show that the field emission current increased gradually at 60min. The mechanism of this phenomenon was investigated in atomic level by employing the first-priniples molecular-dynamics simulation method. The simulation results show that the mechanism of the phenomenon was not the movement of atoms of the diamond but the movement of atoms of the hydrocarbon deposited during the field emission.
公益社団法人精密工学会の論文
2005-08-05