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Taiwan Semiconductor Manufacturing Company | 論文
- The Impact of Pad Test-Fixture for De-embedding on Radio-Frequency MOSFETs
- Anomalous Hot-Carrier-Induced On-Resistance Degradation in High-Voltage LDMOS Transistors
- Mechanism and Reliability Index of Hot-Carrier Degradation in LDMOS Transistors
- Characteristics and improvement in hot-carrier reliability of sub-micrometer high-voltage double diffused drain metal-oxide-semiconductor field-effect transistors (Special issue: Solid state devices and materials)
- Hot-Carrier Reliability Improvement in Submicron High-Voltage DMOS Transistors
- Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
- Physical and Barrier Properties of Plasma Enhanced Chemical Vapor Deposition α-SiC : N : H Films
- Effects of O_2- and N_2-Plasma Treatments on Copper Surface
- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiC : H Films from Trimethylsilane and Tetramethylsilane
- A Novel Process-Compatible Floating Channel Crystallization Technique to Fabricate High-Performance Poly-Si TFTs
- Improvement of Electrical Characteristics for Novel Fluorine-Incorporated Poly-Si TFTs with TiN Gate Electrode and Pr_2O_3 Gate Dielectric
- A Comparison of Behaviors between Hydrogenated/Unhydrogenated Polysilicon Thin Film Transistors under Electric Stress
- Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric
- Physical and Barrier Properties of Plasma-Enhanced Chemical Vapor Deposited α-SiCN:H Films with Different Hydrogen Contents
- Post-Implantation Thermal Annealing Effect on the Gate Oxide of Triple-Well-Structure
- An Efficient Improvement for Barrier Effect of W-Filled Contact
- Generalized Interconnect Delay Time and Crosstalk Models: II. Crosstalk-Induced Delay Time Deterioration and Worst Crosstalk Models : Semiconductors
- Generalized Interconnect Delay Time and Crosstalk Models: I. Applications of Interconnect Optimization Design : Semiconductors
- The Impacts of Back-End High Temperature Thermal Treatments on the Characteristics and Gate Oxide Reliability of Thin Film Transistor in Ultra Large Scale Integrated Circuit Process
- Impact of Hydrogenating Plasma Induced Oxide Charging Effects on the Characteristics of Polysilicon Thin Film Transistors