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Research Center for Nanodevices and Systems, Hiroshima University | 論文
- Effect of a Novel Potential Atypical Antipsychotic Drug, Y-931, in Producing Dystonia in Cebud Monkeys
- Organic Contamination Dependence of Process-Induced Interface Trap Generation in Ultrathin Oxide Metal Oxide Semiconductor Transistors
- Fabrication Technologies for Double-SiO_2-Barrier Metal-Oxide-Semiconductor Transistor with a Poly-Si Dot
- Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors
- Effects of Hydrogen and Bias on Single-Crystal Al Growth on Vicinal Si by DC Magnetron Sputtering
- Influence of Organic Contaminant on Trap Generation in Thin SiO_2 of Metal-Oxide-Semiconductor Capacitors
- Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO_2
- Effect of Light Irradiation on Native Oxidation of Silicon Surface
- Influence of Organic Contaminant on Breakdown Characteristics of MOS Capacitors with Thin SiO_2
- Realization of K-Nearest-Matches Search Capability in Fully-Parallel Associative Memories(VLSI Design Technology and CAD)
- LDMOS Model for Device and Circuit Optimization
- Xe Preamorphization Implantation for Transient Enhanced Diffusion Suppression of As in Ge Substrate
- Measurement of Copper Drift in Methylsilsesquiazane-Methylsilsesquioxane Dielectric Films
- Measurement of Copper Drift in Methylsilsesquioxane Dielectric Films
- Design of Optically Coupled Three-Dimensional Content Addressable Memory
- Control of Fine Particulate and Gaseous Contaminants by UV/Photoelectron Method (Special Issue on Scientific ULSI Manufacturing Technology)
- Coupled Monte Carlo-Energy Relaxation Analysis of Hot Carrier Light Emission in Metal Oxide Semiconductor Field Effect Transistor's
- Carrier Mobility in Metal-Oxide-Semiconductor Field Effect Transistor with Atomic-Layer-Deposited Si-Nitride Gate Dielectrics
- Conduction Mechanism in Extremely Thin Poly-Si Wires : Width Dependence of Coulomb Blockade Effect
- Low-Temperature Selective Deposition of Silicon by Time-Modulation Exposure of Disilane and Formation of Silicon Nanowires