Xe Preamorphization Implantation for Transient Enhanced Diffusion Suppression of As in Ge Substrate
スポンサーリンク
概要
- 論文の詳細を見る
- 2006-09-13
著者
-
SHIBAHARA K.
Research Center for Nanodevices and Systems, Hiroshima University
-
Fukunaga T.
Research Center For Nanodevices And Systems Hiroshima University
-
HOSAWA K.
Research Center for Nanodevices and Systems, Hiroshima University
-
HOSOI T.
Research Center for Nanodevices and Systems, Hiroshima University
-
Hosawa K.
Research Center For Nanodevices And Systems Hiroshima University
-
Shibahara K.
Research Center For Nanodevices And Systems Hiroshima University
関連論文
- Xe Preamorphization Implantation for Transient Enhanced Diffusion Suppression of As in Ge Substrate
- High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
- Optically Interconnected Kohonen Net for Pattern Recognition
- Antimony Behavior in Laser Annealing Process for Ultra Shallow Junction Formation
- Influence of Organic Contamination on Reliability and Trap Generation in MOS Devices