Antimony Behavior in Laser Annealing Process for Ultra Shallow Junction Formation
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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Matuno A.
Research Center Research Division Komatsu Ltd.
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SHIBAHARA K.
Research Center for Nanodevices and Systems, Hiroshima University
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ISHIKAWA Y.
Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido
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ONIMATU D.
Research Center for Nanodevices and Systems, Hiroshima University
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MAEDA N.
Research Center for Nanodevices and Systems, Hiroshima University
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MINEJI A.
NEC ULSI Device Development Division
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KAGAWA K.
Research Center, Research Division, Komatsu Ltd.
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NIRE T.
Research Center, Research Division, Komatsu Ltd.
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Nire T.
Research Center Research Division Komatsu Ltd.
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Onimatu D.
Research Center For Nanodevices And Systems Hiroshima University
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Shibahara K.
Research Center For Nanodevices And Systems Hiroshima University
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- Antimony Behavior in Laser Annealing Process for Ultra Shallow Junction Formation
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