Scanning Tunneling Microscope Study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy
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概要
- 論文の詳細を見る
- 1995-08-21
著者
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HASEGAWA H.
Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido
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Ozeki T.
Research Center For Interface Quantum Electronics And Department Of Electrical Engineering Hokkaido
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YANG B.
Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido
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ISHIKAWA Y.
Research Center for Interface Quantum Electronics and Department of Electrical Engineering, Hokkaido
関連論文
- Photoluminescence and Cathodoluminescence Characterization of InGaAs Ridge Quantum Wires Formed by Selective Molecular Beam Epitaxy
- Scanning Tunneling Microscope Study of (001) InP Surface Prepared by Gas Source Molecular Beam Epitaxy
- Fowler-Nordheim current oscillations in Si(111)/SiO_2/twisted-Si(111) tunneling structures
- Antimony Behavior in Laser Annealing Process for Ultra Shallow Junction Formation