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Renesas Technology Corp. | 論文
- Counting Rectangular Drawings or Floorplans in Polynomial Time
- A Quaternary Decision Diagram Machine : Optimization of Its Code
- Suppression of Boron Penetration from Source/Drain-Extension to Improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65-nm Node CMOS and Beyond
- Advanced Air Gap Process for Multi-Level-Cell Flash Memories Reducing Threshold Voltage Interference and Realizing High Reliability
- Analytical Approach for Enhancement of n-Channel Metal--Oxide--Semiconductor Field-Effect Transistor Performance with Carbon-Doped Source/Drain Formed by Molecular Carbon Ion Implantation and Laser Annealing
- Continuous Design Efforts for Ubiquitous Network Era under the Physical Limitation of Advanced CMOS(Digital,Low-Power, High-Speed LSIs and Related Technologies)
- A Parallel Branching Program Machine for Sequential Circuits : Implementation and Evaluation
- A New LDMOS Transistor Macro-Modeling for Accurately Predicting Bias Dependence of Gate-Overlap Capacitance
- Dynamic Floating Body Control SOI CMOS for Power Managed Multimedia ULSIs
- A Low Power and High Speed Data Transfer Scheme with Asynchronous Compressed Pluse Width Modulation for AS-Memory
- A Highly Reliable 0.18μm SOI CMOS Technology for 3.3V/1.8V Operation Using Hybrid Trench Isolation and Dual Gate Oxide
- Analysis of the Charge Density at Field Oxide/SOI and SOI/Buried Oxide Interfaces in Partially Depleted SOI MOSFET's with and without Hydrogenation
- DFT Timing Design Methodology for Logic BIST(Timing Verification and Test Generation)(VLSI Design and CAD Algorithms)
- DFT Timing Design Methodology for Logic BIST
- A Hardware Accelerator for Java^ Platforms on a 130-nm Embedded Processor Core(Integrated Electronics)
- Reduction of Area per Good Die for SoC Memory Built-In Self-Test
- Boron Observation in p-Type Silicon Device by Spherical Aberration Corrected Scanning Transmission Electron Microscope
- Single Event Effects of Semiconductor Devices at the Ground (特集 シンポジウム「半導体シングルイベント事象の物理と応用」)
- Concentration Study of Deep-Level Cu Center in Cu-Diffused Si Crystals by Deep-Level Transient Spectroscopy and Photoluminescence Measurements
- A New Critical Area Simulation Algorithm and Its Application for Failing Bit Analysis