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Renesas Technology Corp. | 論文
- Double M-ary/Spread Spectrum Communication Systems (Special Section on Information Theory and Its Applications)
- A Long Data Retention SOI DRAM with the Body Refresh Function (Special Issue on New Concept Device and Novel Architecture LSIs)
- SOI-DRAM Circuit Technologies for Low Power High Speed Multigiga Scale Memories
- A Physical Synthesis Methodology for Multi-Threshold-Voltage Design in Low-Power Embedded Processor(Low-Power System LSI, IP and Related Technologies)
- Nitride-based nonvolatile memory and role of SiON dielectric film for performance improvement
- Impact of Well Edge Proximity Effect on Timing
- 特別招待講演 Spin-Transfer Torque Writing Technology (STT-RAM) For Future MRAM
- Direct Measurement of Transient Drain Current in PD-SOI MOSFETs Using Nuclear Microprobe for Highly Reliable Device Design
- Analysies of the Radiation Caused Characteristics Change in SOI MOSFETS Using Field Shield Isolation
- Phase and Composition Control of Ni-FUSI gates by N_2 I/I with Double Ni-silicidation
- Suppression of Boron Penetration from S/D Extension to improve Gate Leakage Characteristics and Gate-Oxide Reliability for 65nm node CMOS and beyond
- A 45-nm 37.3GOPS/W Heterogeneous Multi-Core SOC with 16/32 Bit Instruction-Set General-Purpose Core
- Concentration Study of Deep-Level Cu Center in Cu-Diffused Si Crystals by Deep-Level Transient Spectroscopy and Photoluminescence Measurements
- Fatigue Strength of BGA Type Solder Joints between Package and Printed Wiring Board of Portable Device
- Impact of Vth interference suppression using a novel Poly Si shield on FLASH memories
- CuAl Alloy Interconnects as a Solution to the Trade-off between Reliability and Defect Density
- High-Speed 0.5μm SOI 1/8 Frequency Divider with Body-Fixed Structure for Wide Range of Applications
- $V_{\text{ox}}/E_{\text{ox}}$-Driven Breakdown of Ultrathin SiON Gate Dielectrics in p-Type Metal Oxide Semiconductor Field Effect Transistors under Low-Voltage Inversion Stress
- Wide-Range Threshold Voltage Controllable Silicon on Thin Buried Oxide Integrated with Bulk Complementary Metal Oxide Semiconductor Featuring Fully Silicided NiSi Gate Electrode