Phase and Composition Control of Ni-FUSI gates by N_2 I/I with Double Ni-silicidation

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概要

• 論文の詳細を見る
• 2007-09-19

著者

• YAMAMOTO K.

  Matsushita assignee at IMEC

• Oosuka T.

  Matsushita Electric Industrial Co. Ltd.

• SAKASHITA S.

  Renesas Technology Corporation

• YUGAMI J.

  Renesas Technology Corporation

• SATO Y.

  Matsushita Electric Industrial Co., Ltd.

• INOUE M.

  RENESAS technology Corp.

• ANMA M.

  RENESAS technology Corp.

関連論文

• Current Status and Addressing the Challenges of Hf-based Gate Stack toward 45nm-LSTP Application
• Low Threshold Voltage Gate-First pMISFETs with Poly-Si/TiN/HfSiON Stacks Fabricated with PVD-based In-situ Solid Phase Interface Reaction (SPIR) Method
• Phase and Composition Control of Ni-FUSI gates by N_2 I/I with Double Ni-silicidation
• Diffusion control technique in TiN stacked metal gate electrodes for p-MISFETs
• The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT

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