SAKASHITA S. | Renesas Technology Corporation
スポンサーリンク
概要
関連著者
-
SAKASHITA S.
Renesas Technology Corporation
-
YUGAMI J.
Renesas Technology Corporation
-
KAWAHARA T.
Renesas Technology Corporation
-
WATANABE H.
Graduate School of Engineering, Osaka University
-
YAMAMOTO K.
Matsushita assignee at IMEC
-
Oosuka T.
Matsushita Electric Industrial Co. Ltd.
-
Horie S.
Graduate School Of Engineering Osaka University
-
KITANO N.
Graduate School of Engineering, Osaka University
-
ARIMURA H.
Graduate School of Engineering, Osaka University
-
HOSOI T.
Graduate School of Engineering, Osaka University
-
SHIMURA T.
Graduate School of Engineering, Osaka University
-
NISHIDA Y.
Renesas Technology Corporation
-
MINAMI T.
Canon ANELVA Corporation
-
KOSUDA M.
Canon ANELVA Corporation
-
Yugami J.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
-
SATO Y.
Matsushita Electric Industrial Co., Ltd.
-
INOUE M.
RENESAS technology Corp.
-
ANMA M.
RENESAS technology Corp.
-
KAWAHARA T.
Process Technology Development Div., Renesas Technology Corp.
-
Yamanari S.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
-
SAKASHITA S.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
MIZUTANI M.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
INOUE M.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
MORI K.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
HIGASHI M.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
NISHIDA Y.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
HONDA K.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
MURATA N.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
TSUCHIMOTO J.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
FUJIWARA K.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
YONEDA M.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
-
Tsuchimoto J.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
-
Yoneda M.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
-
Kawahara T.
Process Technology Development Div. Renesas Technology Corp.
-
Arimura H.
Graduate School Of Engineering Osaka University
-
Kitano N.
Graduate School Of Engineering Osaka University
-
Mizutani M.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
著作論文
- Low Threshold Voltage Gate-First pMISFETs with Poly-Si/TiN/HfSiON Stacks Fabricated with PVD-based In-situ Solid Phase Interface Reaction (SPIR) Method
- Phase and Composition Control of Ni-FUSI gates by N_2 I/I with Double Ni-silicidation
- Diffusion control technique in TiN stacked metal gate electrodes for p-MISFETs