Diffusion control technique in TiN stacked metal gate electrodes for p-MISFETs
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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KAWAHARA T.
Renesas Technology Corporation
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SAKASHITA S.
Renesas Technology Corporation
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YUGAMI J.
Renesas Technology Corporation
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Yugami J.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
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KAWAHARA T.
Process Technology Development Div., Renesas Technology Corp.
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Yamanari S.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
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SAKASHITA S.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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MIZUTANI M.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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INOUE M.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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MORI K.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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HIGASHI M.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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NISHIDA Y.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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HONDA K.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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MURATA N.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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TSUCHIMOTO J.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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FUJIWARA K.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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YONEDA M.
Process Technology Development Div., Production and Technology Unit, Renesas Technology Corp.
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Tsuchimoto J.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
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Yoneda M.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
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Kawahara T.
Process Technology Development Div. Renesas Technology Corp.
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Mizutani M.
Process Technology Development Div. Production And Technology Unit Renesas Technology Corp.
関連論文
- Low Threshold Voltage Gate-First pMISFETs with Poly-Si/TiN/HfSiON Stacks Fabricated with PVD-based In-situ Solid Phase Interface Reaction (SPIR) Method
- Phase and Composition Control of Ni-FUSI gates by N_2 I/I with Double Ni-silicidation
- Layout Independent Transistor with Stress-controlled and Highly Manufacturable STI Process
- Diffusion control technique in TiN stacked metal gate electrodes for p-MISFETs
- The Impact of Thickness Control in HfSiON Gate Dielectric on Electron Mobility with sub-nm EOT